硬脆材料複合加工技術 2023/07/11

簡介 Introductions

碳化矽可應用在次世代功率元件中，為下世代功率半導體元件的關鍵材料。因高硬度及高耐化性等難加工特性，導致使生產率低，阻礙功率元件發展潮流。本技術建立複合式研拋製程平台，透過導入超音波輔助加工技術及大氣電漿輔助改質技術，可大幅提升碳化矽晶圓產能效率及有效降低製造成本。

Silicon carbide can be used in next-generation power components and is a key material for next-generation power semiconductor parts. Due to difficult processing characteristics such as high hardness and high chemical resistance, the productivity is low and the development trend of power components is hindered. This technology establishes a hybrid-processing platform which includes ultrasonic assisted processing technology and atmospheric plasma assisted modification technology. It can greatly improve the production efficiency of silicon carbide wafers and effectively reduces manufacturing costs.

特色與創新 Characters and Innovations

• 建立超音波輔助輪磨技術，可搭配高號數砂輪，達到高的材料移除率 > 10 μm /min，表面粗糙度 <10 nm。
• 透過大氣電漿改質拋光技術，電漿作用的面積 >200 mm，拋光移除率 >1.5 μm/hr ，表面粗糙度 <0.5 nm。
• The ultrasonic-assisted grinding technology has been developed, which, combined with high-number grinding wheels achieve high material removal rate >10 μm/min and finished surface roughness <10 nm.
• Through atmospheric plasma modification polishing technology, the plasma action area is >200 mm, the polishing removal rate is >1.5 μm/hr, and the surface roughness is <0.5 nm.

應用與效益 Applications and Benefits

• 碳化矽晶圓、玻璃晶圓、鑽石基板。
• Silicon carbide wafers, glass wafers, diamond substrates.

聯絡 contact

• 翁志強 Chih-Chiang Weng
• TEL:886-3-5918795
• FAX:886-3-5820043
• E-mail: PeterWeng@itri.org.tw

更多資訊

大氣電漿改質抛光組 Atmospheric Plasma Modified Polishing Module

超音波輔助輪磨模組 Ultrasonic Assisted Grinding module