電漿精準離子能量分佈控制技術 2022/07/20

簡介 Introductions

整合多重物理量耦合模擬分析，包含熱傳 / 氣流 / 電磁場 / 電漿 / 化學反應等，建立電漿製程反應數據資料庫而建構電漿診斷技術，包含蘭牟爾探針、GEA 離子能量分析模組及非侵入式射頻離子診斷等，以精準控制離子能量分佈，並優化加速電漿源開發時程。

Integrate multi-physics modeling techniques: thermal, flow, E/M, chemical reaction to create plasma database, and develop plasma diagnostic technology such as Langmuir probe, GEA ion energy analyzer and non-invasive rf ion measurement technologies, to control precise ion energy distribution and optimize plasma source module design.

特色與創新 Characters and Innovations

•    傳統電漿模組單頻偏壓所產生離子能量分佈過寬 ( IED> 45 eV)，無法滿足原子層級製程 (ALE or ALD) 所需。本創新技術建構偏壓混合波形調控模組，抑制電 漿鞘層電位離散分佈，進而達到精準窄離子能量分佈 效果 (IED < 15 eV)。

•    The ion energy distribution (IED) generated in traditional plasma source is too wide to be used in atomic level plasma process. According to this issue, an  innovative bias waveform modulation module is developed for mixing the High/Low frequency rf power to a suitable bias waveform and compensate the dispersing part of the plasma sheath voltage, and resulting in the precise narrow ion energy distribution ( IED < 15 eV).

應用與效益 Applications and Benefits

•    本創新技術可用以掌握電漿腔體特性，深入製程核心機制，應用於設備開發以及製程即時監控，同時電漿精準離子能量分佈控制技術，除先進半導體節點 製程應用之外，也可運用於精微表處、mini-LED、 SiC、Diamond & 二維材料…等新興產業。

•    This innovative technology can be used to understand deeper the plasma characteristics and accelerate the development of process equipment. In addition to advance semiconductor process, the precise ion energy distribution control technology also can be applied in some emerging industry fields, such as mini-LED、SiC、 Diamond & 2-D materials.

聯絡 contact

•    劉志宏 Chih-Hung Liu
•    E-mail: stanliu@itri.org.tw
•   TEL:886-3-5917796
•    FAX:886-3-5910350

更多資訊

• 更多技術內容：https://www.automan.tw/aboutus/annual-report.aspx
• YouTube技術影片：https://www.youtube.com/channel/UCU3037vDY8r0m_rJ_U7lHvQ

 

ICP 電漿源模擬分析