高深寬比濕式晶種層與銅填孔技術 2023/07/11

簡介 Introductions

結合電鍍銅藥液開發、流場分析技術、電化學分析技術與高深寬比銅電鍍治具設計等，能於深寬比15之玻璃基板上完成濕式晶種層與銅填孔製程，面銅厚度0.5 kN/m，填銅之孔隙<1 µm。

The wet metallization and High Aspect Ratio Through Glass Via (HAR-TGV) filling technologies has been developed by combining various technologies, such as Cu electroplating formulation, flow field analysis, electrochemical analysis and the plating fixtures design. In this work, we demonstrated a defect-free Cu filling for HAR (AR>15) TGVs by an all-solution process. Furthermore, the Cu surface thickness (Cu overburden) can be less than 5um and adhesion reaches to 0.5 kN/m between glass & Cu interface.

特色與創新 Characters and Innovations

• 開發複合金屬氧化物表面處理技術，增加金屬薄膜與 玻璃基材附著力，附著力達 0.5 kN /m，且低表面粗糙 度 <50 nm。
• 開發雙功能型單劑填孔電鍍配方，取代傳統三劑配方 ( 平整劑 / 加速劑 / 抑制劑 )，電鍍填銅深寬比可達 AR 15。
• The Adhesion Promoting Layer (APL) has been developed from a novel metal-oxide materials to promote the adhesion between glass & Cu interface. The adhesion reaches to 0.5 kN/m between glass & Cu interface. The APL provides lower surface roughness (< 50 nm) on glass surface.
• A novel dual-functional plating formulation system (leveler only) has been developed to replace traditional plating formulation (leveler/accelerator/suppressor) for high aspect ratio TGVs filling technology.
• We demonstrated the void-free filling in HAR-TGV filling (AR>15) in the novel dual-functional plating formulation system.

應用與效益 Applications and Benefits

• 3D IC封裝、玻璃中介層、IC載板。
• 3D IC packaging, glass interposer, IC carrier.

聯絡 contact

• 張佑祥  Daniel Chang
• TEL:886-3-5912379
• FAX:886-3-5820043
• E-mail: yhchang@itri.org.tw

更多資訊

高深寬比電鍍銅架橋技術(AR>15)

High Aspect Ratio TGV Cu Bridge (AR>15)

低面銅，減少研磨時間

Low Surface Cu Overburden Reduces CMP Process Time